Low threshold InAs-based interband cascade lasers grown by MBE

GaInNAs ( Sb ) lasers grown on GaAs by MBE

We demonstrate the first 1.5 mm GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 mm. A 1.465mm laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930A/cm per quantum well, a differential quantum efficiency of 0.30W/A (both facets), an ex...

Demonstration of the self-mixing effect in interband cascade lasers

Advanced Strain Compensation in MBE-Grown Semiconductor Disk Lasers

Nowadays semiconductor disk lasers are of great importance in virtue of their high output power. In fact, it is common to fabricate devices having an output power of several watts [1, 2]. Furthermore, the free access of the resonator allows intracavity SHG (second harmonic generation) using nonlinear crystals. In this way, the range of emission wavelengths that can be realized using different c...

Mid-infrared interband cascade lasers operating at ambient temperatures

We discuss the state-of-the-art performance of interband cascade lasers emitting in the 3–5μm spectral band. Broad-area devices with five active stages display pulsed threshold current densities as low as 400A cm−2 at room temperature. Auger decay rates are extracted from the analysis of threshold current densities and differential slope efficiencies of nearly 30 lasers, and found to be signifi...

Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga0.665In0.335AsxSb1 - x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be bl...